(China (Mainland))
Product Summary
These P-channel MOSFET SI3443DVTRPBF from International Rectifier utilizes advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package of the SI3443DVTRPBF with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23.
Parametrics
SI3443DVTRPBF absolute maximum ratings:(1)VDS, Drain- Source Voltage: -20 V ; (2)ID @ TA = 25℃, Continuous Drain Current, VGS @ -4.5V: -4.4 A; (3)ID @ TA= 70℃, Continuous Drain Current, VGS @ -4.5V: -3.5 A; (4)IDM, Pulsed Drain Current: -20A; (5)PD @TA = 25℃, Power Dissipation: 2.0 w; (6)PD @TA = 70℃, Power Dissipation: 1.3w; (7)Linear Derating Factor: 0.016 W/℃; (8)EAS, Single Pulse Avalanche Energy: 31 mJ; (9)VGS, Gate-to-Source Voltage: ± 12 V; (10)TJ, TSTG, Junction and Storage Temperature Range: -55 to + 150 ℃.
Features
SI3443DVTRPBF features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)Surface Mount; (4)Available in Tape & Reel; (5)-2.5V Rated; (6)Lead-Free.
Diagrams
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 SI3443DVTRPBF |
International Rectifier |
MOSFET |
Data Sheet |
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