(China (Mainland))
Product Summary
The 1N4007 is a 1.0A rectifier.
Parametrics
1N4007 maximum ratings: (1)Peak Repetitive Reverse Voltage, VRRM: 1000v; (2)Working Peak Reverse Voltage, VRWM: 1000v; (3)DC Blocking Voltage, VR: 1000v; (4)RMS Reverse Voltage, VR(RMS): 700 V; (5)Average Rectified Output Current @ TA = 75℃, IO: 1.0 A; (6)Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method), IFSM: 30 A; (7)Forward Voltage @ IF = 1.0A, VFM: 1.0 V; (8)Peak Reverse Current @ TA = 25℃, IRM: 5.0uA; at Rated DC Blocking Voltage @ TA = 100℃: 50 uA; (9)Typical Junction Capacitance, Cj: 8 pF; (10)Typical Thermal Resistance Junction to Ambient, RθJA: 100 K/W; (11)Maximum DC Blocking Voltage Temperature, TA: +150 ℃; (12)Operating and Storage Temperature Range, Tj, TSTG: -65 to +175 ℃.
Features
1N4007 features: (1)Diffused Junction; (2)High Current Capability and Low Forward Voltage Drop; (3)Surge Overload Rating to 30A Peak; (4)Low Reverse Leakage Current; (5)Plastic Material: UL Flammability Classification Rating 94V-0.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 1N4007/1 |
Vishay Semiconductors |
Rectifiers Vr/1000V Io/1A BULK |
Data Sheet |
Negotiable |
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1N4007/54 |
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RECTIFIER 1A 1000V DO-41 |
Data Sheet |
Negotiable |
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1N4007_Q |
Fairchild Semiconductor |
Rectifiers Vr/1000V Io/1A |
Data Sheet |
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1N4007-19 |
Taiwan Semiconductor |
Rectifiers 1A,1600V,Std SILASTIC Rect |
Data Sheet |
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1N4007-B |
Rectron |
Rectifiers Vr/1000V Io/1A BULK |
Data Sheet |
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1N4007B-G |
Comchip Technology |
Rectifiers |
Data Sheet |
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1N4007-E3/53 |
Vishay Semiconductors |
Rectifiers Vr/1000V Io/1A |
Data Sheet |
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1N4007-E3/54 |
Vishay Semiconductors |
Rectifiers Vr/1000V Io/1A |
Data Sheet |
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