Product Summary

The BLW50F is an NPN silicon RF power transistor. It is designed for use in transmitters in the HF and VHF band applications up tp 30 MHz.

Parametrics

BLW50F absolute maximum ratings: (1)IC: 3.25 A; (2)VCBO: 110 V; (3)VCEO: 55 V; (4)VEBO: 4.0 V; (5)PDISS: 87 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 2.0 ℃/W.

Features

BLW50F features: (1)PG = 14 dB min. at 75 W/30 MHz; (2)IMD3 = 50 dBc max. at 75 W(PEP); (3)Omnigold Metalization System.

Diagrams

BLW50F dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLW50F
BLW50F
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $58.65
1-10: $53.82
10-25: $48.30
25-50: $42.78
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLW50F
BLW50F
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $58.65
1-10: $53.82
10-25: $48.30
25-50: $42.78