(China (Mainland))
Product Summary
The FM25H20-DG is a 2-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. The FM25H20-DG provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories. Unlike Serial Flash, the FM25H20-DG performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been transferred to the FM25H20-DG. The next bus cycle may commence without the need for data polling. The FM25H20-DG offers virtually unlimited write endurance, orders of magnitude more endurance than Serial Flash. Also, F-RAM exhibits lower power consumption than Serial Flash.
Parametrics
FM25H20-DG absolute maximum ratings: (1)VDD, Power Supply Voltage with respect to VSS: -1.0V to +4.5V; (2)VIN, Voltage on any pin with respect to VSS: -1.0V to +4.5V and VIN < VDD+1.0V; (3)TSTG, Storage Temperature: -55 to + 125℃; (4)TLEAD, Lead Temperature (Soldering, 10 seconds): 260℃; (5)VESD, Electrostatic Discharge Voltage: Human Body Model (AEC-Q100-002 Rev. D): 2KV; Charged Device Model (AEC-Q100-011 Rev. B): 1KV; Machine Model (AEC-Q100-003 Rev. E): 200V; (6)Package Moisture Sensitivity Level: MSL-1 (TDFN), SL-1 (EIAJ).
Features
FM25H20-DG features: (1)Organized as 256K x 8 bits; (2)High Endurance 100 Trillion (1014) Read/Writes; (3)10 Year Data Retention; (4)NoDelay Writes; (5)Advanced High-Reliability Ferroelectric Process; (6)Hardware Protection; (7)Software Protection; (8)Low Power Consumption; (9)Industry Standard Configurations; (10)Very Fast Serial Peripheral Interface - SPI.
Diagrams
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 FM25H20-DG |
Ramtron |
F-RAM 2Mb (256kX8) 3V F-RAM |
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FM25H20-DGTR |
Ramtron |
F-RAM 2Mb (256kX8) 3V F-RAM |
Data Sheet |
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