(China (Mainland))
Product Summary
The IS61S6432-133TQ-TR is a high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, secondary cache for the Pentium, 680X0, and PowerPC microprocessors. The IS61S6432-133TQ-TR is organized as 65,536 words by 32 bits, fabricated with ISSI’s advanced CMOS technology. The IS61S6432-133TQ-TR integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edgetriggered single clock input.
Parametrics
IS61S6432-133TQ-TR absolute maximum ratings: (1)TBIAS Temperature Under Bias:–40℃ to +85℃; (2)TSTG Storage Temperature: –55℃ to +150℃; (3)PD Power Dissipation: 1.8W; (4)IOUT Output Current (per I/O): 100mA; (5)VIN, VOUT Voltage Relative to GND for I/O Pins: –0.5 to VCCQ + 0.3V; (6)VIN Voltage Relative to GND for for Address and Control Inputs: –0.5 to 5.5V.
Features
IS61S6432-133TQ-TR features: (1)Internal self-timed write cycle; (2)Individual Byte Write Control and Global Write; (3)Clock controlled, registered address, data and control; (4)Pentium or linear burst sequence control using MODE input; (5)Three chip enables for simple depth expansion and address pipelining; (6)Common data inputs and data outputs; (7)Power-down control by ZZ input; (8)JEDEC 100-Pin TQFP and PQFP package; (9)Single +3.3V power supply; (10)Two Clock enables and one Clock disable to eliminate multiple bank bus contention; (11)Control pins mode upon power-up:; (12)MODE in interleave burst mode; (13)ZZ in normal operation mode; (14)These control pins can be connected to GNDQ or VCCQ to alter their power-up state; (15)Industrial temperature available.
Diagrams
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