(China (Mainland))
Product Summary
The M36DR432A10CZA6 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4Mbit of SRAM. The M36DR432A10CZA6 is offered in a Stacked LFBGA66 (0.8 mm pitch) package. The two components are distinguished by use with three chip enable inputs: EF for the Flash memory and, E1S and E2S for the SRAM. The two components of the M36DR432A10CZA6 are also separately power supplied and grounded.
Parametrics
M36DR432A10CZA6 absolute maximumratings: (1)TA, Ambient Operating Temperature: –40 to 85℃; (2)TBIAS, Temperature Under Bias: –40 to 125℃; (3)TSTG, Storage Temperature: –55 to 150℃; (4)VIO, Input or Output Voltage: –0.2 to VDD +0.3 V; (5)VDDF, Flash Chip Supply Voltage: –0.5 to 2.7 V; (6)VDDS, SRAM Chip Supply Voltage: –0.2 to 2.6 V; (7)VPPF, Program Voltage: –0.5 to 13.0 V.
Features
M36DR432A10CZA6 features: (1)supply voltage: VDDF =VDDS =1.65V to 2.2V; VPPF = 12V for Fast Program (optional); (2)access time: 100,120ns; (3)low power consumption; (4)electronic signature: Manufacturer Code: 20h; Top Device Code, M36DR432A: 00A0h; Bottom Device Code.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 M36DR432A10CZA6 |
STMicroelectronics |
Flash 32M (2Mx16) 100ns |
Data Sheet |
Negotiable |
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M36DR432A10CZA6T |
STMicroelectronics |
Flash 32M (2Mx16) 100ns |
Data Sheet |
Negotiable |
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