(China (Mainland))
Product Summary
The RRFP10N12 is an n-channel enhancement-mode silicon-gate power field-effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. The RRFP10N12 can be operated directly from integrated circuits. The device is supplied in the JEDEC TO-204AA steel package and the RFP-types in the JEDEC TO-220AB plastic package. The RRFP10N12 was formerly RCA developmental numbers TA9192 and TA9212, respectively.
Parametrics
RFP10N12 absolute maximum ratings: (1)drain-source voltage: Voss=120v; (2)drain-gate voltage (Rqs=1 MO): Vmr=120v; (3)gate-source voltage: Vgs=±20v; (4)drain current, RMS Continuous: Id=10A; Pulsed, Idm=25A; (5)POWER DISSIPATION @ TC=25℃: PT=60w; Derate above TC=25℃: 0.48w/℃; (6)operating and storage, temperature: Tstg=-55 to 150℃.
Features
RFP10N12 features: (1)SOA is power-dissipation limited; (2)Nanosecond switching speeds; (3)Linear transfer characteristics; (4)High input impedance m Majority carrier device.
Diagrams
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 RFP12N06RLE |
Other |
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Data Sheet |
Negotiable |
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RFP12N08 |
Other |
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Data Sheet |
Negotiable |
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RFP12N10 |
Other |
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Data Sheet |
Negotiable |
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RFP12N10L |
Fairchild Semiconductor |
MOSFET TO-220AB N-Ch Power |
Data Sheet |
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RFP12N10L_Q |
Fairchild Semiconductor |
MOSFET TO-220AB N-Ch Power |
Data Sheet |
Negotiable |
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RFP12P08 |
Fairchild Semiconductor |
MOSFET TO-220 |
Data Sheet |
Negotiable |
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