(China (Mainland))
Product Summary
The STP60NF06 is a N-channel power MOSFET. The STP60NF06 realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converter for Telecom and Computer application. The STP60NF06 is also intended for any application with low gate charge drive requirements. The applications of the STP60NF06 include high-efficiency dc-dc converters, ups and motor control, automotive.
Parametrics
STP60NF06 absolute maximum ratings: (1)Drain-source Voltage (VGS = 0), VDS: 60 V; (2)Drain-gate Voltage (RGS = 20 kW), VDGR: 60 V; (3)Gate- source Voltage, VGS: ± 20 V; (4)Drain Current (continuos) at TC = 25℃, ID: 60A; (5)ID Drain Current (continuos) at TC = 100℃, ID: 42A; (6)Drain Current (pulsed), IDM: 240A; (7)Total Dissipation at TC = 25℃, PTOT: 42 W; (8)Derating Factor: 0.73W/℃; (9)Peak Diode Recovery voltage slope, dv/dt: 4 V/ns; (10)Storage Temperature, Tstg: -65 to 175℃; (11)Max. Operating Junction Temperature, Tj: -65 to 175℃.
Features
STP60NF06 features: (1)Typical RDS(on) = 0.014Ω; (2)exceptional dv/dt capability; (3)100% avalanche tested; (4)Application oriented characterization.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 STP60NF06 |
STMicroelectronics |
MOSFET N-Ch 60 Volt 60 Amp |
Data Sheet |
|
|
||||||||||||
|
STP60NF06FP |
STMicroelectronics |
MOSFET N-Ch 60 Volt 60 Amp |
Data Sheet |
Negotiable |
|
||||||||||||
|
STP60NF06L |
STMicroelectronics |
MOSFET N-Ch 60 Volt 60 Amp |
Data Sheet |
|
|
||||||||||||
|
STP60NF06LFP |
STMicroelectronics |
MOSFET N-Ch 60 Volt 60 Amp |
Data Sheet |
Negotiable |
|
||||||||||||
