TE28F128J3C150

125 ns Initial Access Speed, 56TSOP, 64-bit User Programmable OTP Cells, Intel StrataFlash Memory

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Price:: US $10.00~15.00 / piece [Get Latest Price]

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PartNumber:: TE28F128J3C150

Brand:: Intel Corporation - Intel | Pack: DIP | D/C: 05+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-12-07

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Part Number:TE28F128J3C150
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Product Summary

The TE28F128J3C150 is an Intel StrataFlash Memory. It provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the TE28F128J3C150 brings reliable, two-bit-per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future devices.

Parametrics

TE28F128J3C150 absolute maximum ratings: (1)Temperature under Bias Extended: –40℃ to +85℃; (2)Storage Temperature: –65℃ to +125℃ ; (3)Voltage On Any signal: –2.0V to +5.0V; (4)Output Short Circuit Current: 100mA.

Features

TE28F128J3C150 features: (1)110/115/120/150 ns Initial Access Speed; (2)125 ns Initial Access Speed (256 Mbit density only); (3)25 ns Asynchronous Page-Mode Reads; (4)30 ns Asynchronous Page-Mode Reads (256Mbit density only); (5)32-Byte Write Buffer; (6)6.8 μs per byte effective programming time; (7)Program and Erase suspend support; (8)Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible; (9)128-bit Protection Register; (10)64-bit Unique Device Identifier; (11)64-bit User Programmable OTP Cells; (12)Absolute Protection with VPEN= GND; (13)Individual Block Locking; (14)Block Erase/Program Lockout during Power Transitions; (15)Multi-Level Cell Technology: High Density at Low Cost; (16)High-Density Symmetrical 128-Kbyte Blocks.