(China (Mainland))
Product Summary
The FM25L256BG is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The FM25L256BG provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
Parametrics
FM25L256BG absolute maximum ratings: (1)VDD, Power Supply Voltage with respect to VSS: -1.0V to +5.0V; (2)VIN, Voltage on any pin with respect to VSS: -1.0V to +5.0V and VIN < VDD+1.0V; (3)TSTG, Storage Temperature: -55 to + 125℃; (4)TLEAD, Lead Temperature (Soldering, 10 seconds): 300℃; (5)VESD, Electrostatic Discharge Voltage: 4kV; (6)Package Moisture Sensitivity Level: MSL-1.
Features
FM25L256BG features: (1)Organized as 32,768 x 8 bits; (2)Unlimited Read/Write Cycles; (3)45 year Data Retention; (4)No Delay Writes; (5)Advanced High-Reliability Ferroelectric Process; (6)Up to 20 MHz Frequency; (7)Direct Hardware Replacement for EEPROM; (8)SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1); (9)Hardware Protection; (10)Software Protection; (11)Low Power Consumption; (12)Low Voltage Operation 2.7V – 3.6V.
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